Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing"

Label

• Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (literal)
• Keywords of "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (literal)

Insieme di parole chiave di

• Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)

Ha membro

• 4H-SiC (Parola chiave)
• post imèlantation annealing (Parola chiave)
• electronic device processing (Parola chiave)
• wide band gap semiconductors (Parola chiave)

Incoming links:

Insieme di parole chiave

• Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)

Membro di

• 4H-SiC (Parola chiave)
• post imèlantation annealing (Parola chiave)
• wide band gap semiconductors (Parola chiave)
• electronic device processing (Parola chiave)