Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes (Articolo in rivista)

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Label
  • Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4740468 (literal)
Alternative label
  • S. Esconjauregui, C. Cepek, M. Fouquet, B. C. Bayer, A. D. Gamalski, Bingan Chen, Rongsi Xie, S. Bhardwaj, C. Ducati, S. Hofmann, and J. Robertson (2012)
    Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes
    in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Esconjauregui, C. Cepek, M. Fouquet, B. C. Bayer, A. D. Gamalski, Bingan Chen, Rongsi Xie, S. Bhardwaj, C. Ducati, S. Hofmann, and J. Robertson (literal)
Pagina inizio
  • 034303 (literal)
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  • https://intranet.cnr.it/servizi/people/prodotto/inserisci (literal)
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  • 112 (literal)
Rivista
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  • 8 (literal)
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  • S. Esconjauregui,1,a) C. Cepek,2 M. Fouquet,1 B. C. Bayer,1 A. D. Gamalski,1 Bingan Chen,1 Rongsi Xie,1 S. Bhardwaj,2 C. Ducati,3 S. Hofmann,1 and J. Robertson1 1Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom 2Istituto Officina dei Materiali-CNR, Laboratorio TASC, s.s. 14 km 163.5, I-34149 Trieste, Italy 3Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom (literal)
Titolo
  • Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes (literal)
Abstract
  • Ammonia (NH3) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH3 plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism. (literal)
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