Preparation and characterization of tin oxide nanowires on SiC (Contributo in atti di convegno)

Type
Label
  • Preparation and characterization of tin oxide nanowires on SiC (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • S. Bianchi, E. Comini, M. Ferroni, G. Sberveglieri, L. Pandolfi, S. Kaciulis, W. Wlodarski, M. Shaflei, S. Kandasamy (2007)
    Preparation and characterization of tin oxide nanowires on SiC
    in 4th Int. Conf. on Solid-State Sensors, Actuators and Microsystems, Lyon, France, June 10-14, 2007
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Bianchi, E. Comini, M. Ferroni, G. Sberveglieri, L. Pandolfi, S. Kaciulis, W. Wlodarski, M. Shaflei, S. Kandasamy (literal)
Pagina inizio
  • 183 (literal)
Pagina fine
  • 186 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Università di Brescia, Laboratorio Sensor ISMN - CNR RMIT University, Melbourne, Australia (literal)
Titolo
  • Preparation and characterization of tin oxide nanowires on SiC (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-0841-2 (literal)
Abstract
  • Interest in nanowires of metal oxide oxides has been exponentially growing in the last years, due to the attracting potential of application in electronic, optical and sensor field. We have focused our attention on the sensing properties of semiconducting nanowires as conductometric and optical gas sensors. Single crystal tin dioxide nanostructures were synthesized to explore and study their capability in form of multi-nanowires sensors. The nanowires of SnO2 have been used to produce a novel gas sensor based on Pt/oxide/SiC structure and operating as Schottky diode. For the first time, a reactive oxide layer in this device has been replaced by SnO2 nanowires. Proposed sensor has maintained the advantageous properties of known SiC-based MOS devices, that can be employed for the monitoring of gases (hydrogen and hydrocarbons) emitted by industrial combustion processes. (literal)
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