Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb (Articolo in rivista)

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Label
  • Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1445495 (literal)
Alternative label
  • Ghezzi C.1, Magnanini R.1, Parisini A.1, Franchi S.2, Gombia E.2, Mosca R.2 (2002)
    Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb
    in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ghezzi C.1, Magnanini R.1, Parisini A.1, Franchi S.2, Gombia E.2, Mosca R.2 (literal)
Pagina inizio
  • 3215 (literal)
Pagina fine
  • 3020 (literal)
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  • 91 (literal)
Rivista
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1 Istituto Nazionale per la Fisica della Materia (INFM), Dipartimento di Fisica, Università di Parma, Parco Area delle Scienze 7a, 43100, Parma, Italy 2 Istituto CNR-MASPEC, Parco Area delle Scienze 37a, 43010 Fontanini, Parma, Italy (literal)
Titolo
  • Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb (literal)
Abstract
  • e analysis of the amplitude of the deep level transient spectroscopy signal due to DX centers is exploited to determine the E-DX occupancy level of the DX center in Te-doped AlxGa1-xSb in the range of low values of x where E-DX is resonant with the conduction band. We take advantage of a small but still detectable change in the occupancy factor of the DX level induced by the filling pulse. It is shown that E-DX is very close to the L conduction band edge for xless than or equal to0.20. This behavior is different from the one at xgreater than or equal to0.30 where E-DX lies in the forbidden energy gap and exhibits an x dependence similar to the X edge. These results are discussed at the light of different atomic configuration for DX centers at an anion-substitutional impurity. (literal)
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