Atomistic modeling of FnVm complexes in pre-amorphized Si (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Atomistic modeling of FnVm complexes in pre-amorphized Si (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2008.08.001 (literal)

Alternative label

• Lopez, P; Pelaz, L; Aboy, M; Impellizzeri, G; Mirabella, S; Priolo, F; Napolitani, E (2008)
  Atomistic modeling of FnVm complexes in pre-amorphized Si
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lopez, P; Pelaz, L; Aboy, M; Impellizzeri, G; Mirabella, S; Priolo, F; Napolitani, E (literal)

Pagina inizio

• 207 (literal)

Pagina fine

• 210 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 154 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Valladolid, Dept Electricidad & Elect, E-47011 Valladolid, Spain; Univ Catania, MATIS CNRS INFM, I-95123 Catania, Italy; Univ Padua, MATIS CNR INFM, I-35131 Padua, Italy (literal)

Titolo

• Atomistic modeling of FnVm complexes in pre-amorphized Si (literal)

Abstract

• The co-implantation of F and B in pre-amorphized Si has been proved to be beneficial for the fabrication of ultrashallow junctions due to a remarkable reduction of B diffusion. This is attributed to the presence of fluorine-vacancy (F-V) complexes after regrowth, acting as annihilation centers for Si interstitials. Whereas the resulting F profile in the recrystallized layer can be easily determined by chemical profiling, the vacancy distribution, which has a strong influence on B diffusion, can only be indirectly estimated. In this work, atomistic simulations have been used to analyze several aspects that can affect the efficiency of F-V complexes on Si interstitials annihilation, by considering the effects on B diffusion and the evolution of F profiles. The vacancy content of the complexes, determined by the F/V ratio, and the complex size play an important role on B redistribution. The existence of a recombination barrier for the interaction of a Si interstitial and some F-V complexes, as proposed by theoretical calculations, and its influence on the Si interstitial annihilation efficiency of the complexes are also analyzed. (C) 2008 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Autore CNR

• FRANCESCO PRIOLO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ENRICO NAPOLITANI (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Atomistic modeling of FnVm complexes in pre-amorphized Si" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Prodotto

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Atomistic modeling of FnVm complexes in pre-amorphized Si" (Insieme di parole chiave)