Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (Articolo in rivista)

Type
Label
  • Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1827938 (literal)
Alternative label
  • Silly M.G.; Radtke C.; Enriquez H.; Soukiassian P.; Gardonio S.; Moras P.; Perfetti P. (2004)
    Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Silly M.G.; Radtke C.; Enriquez H.; Soukiassian P.; Gardonio S.; Moras P.; Perfetti P. (literal)
Pagina inizio
  • 4893 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Note
  • Google Scholar (literal)
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Paris Sud Orsay, Lab SIMA, CEA, DSM DRECAM SPCSI, F-91191 Gif Sur Yvette, France CNR, ISM, I-34012 Basovizza, Italy Elettra Sincrotrone Trieste, I-34012 Basovizza, Italy (literal)
Titolo
  • Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (literal)
Abstract
  • We investigate atomic hydrogen interaction with a preoxidized Si-rich 3C-SiC(100)3x2 surface by synchrotron radiation-based valence band, and Si 2p and C 1s core level photoemission spectroscopies. Atomic hydrogen exposure results in (i) Fermi level built-up in the valence band, (ii) band bending, and (iii) the three Si 2p surface components shifting to lower binding energies. These features indicate H-induced surface metallization. This finding opens perspectives in the metallization at the subnanometric scale of passivated semiconductor surfaces. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it