http://www.cnr.it/ontology/cnr/individuo/prodotto/ID52230
Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (Articolo in rivista)
- Type
- Label
- Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.1827938 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Silly M.G.; Radtke C.; Enriquez H.; Soukiassian P.; Gardonio S.; Moras P.; Perfetti P. (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- Google Scholar (literal)
- ISI Web of Science (WOS) (literal)
- Scopus (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Paris Sud Orsay, Lab SIMA, CEA, DSM DRECAM SPCSI, F-91191 Gif Sur Yvette, France
CNR, ISM, I-34012 Basovizza, Italy
Elettra Sincrotrone Trieste, I-34012 Basovizza, Italy (literal)
- Titolo
- Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface (literal)
- Abstract
- We investigate atomic hydrogen interaction with a preoxidized Si-rich 3C-SiC(100)3x2 surface by synchrotron radiation-based valence band, and Si 2p and C 1s core level photoemission spectroscopies. Atomic hydrogen exposure results in (i) Fermi level built-up in the valence band, (ii) band bending, and (iii) the three Si 2p surface components shifting to lower binding energies. These features indicate H-induced surface metallization. This finding opens perspectives in the metallization at the subnanometric scale of passivated semiconductor surfaces. (literal)
- Prodotto di
- Autore CNR
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