Gigahertz-range Electro-Acoustic Devices Based on Pseudo-Surface-Acoustic Waves in AlN/Diamond/Si Structures (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Gigahertz-range Electro-Acoustic Devices Based on Pseudo-Surface-Acoustic Waves in AlN/Diamond/Si Structures (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1999841 (literal)

Alternative label

• M. Benetti (1); D. Cannatà (1); F. Di Pietrantonio (1); V. I. Fedosov (2); E. Verona (1) (2005)
  Gigahertz-range Electro-Acoustic Devices Based on Pseudo-Surface-Acoustic Waves in AlN/Diamond/Si Structures
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Benetti (1); D. Cannatà (1); F. Di Pietrantonio (1); V. I. Fedosov (2); E. Verona (1) (literal)

Pagina inizio

• 033504-1 (literal)

Pagina fine

• 033504-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 87 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) Consiglio Nazionale delle Ricerche - Istituto di Acustica \"O. M. Corbino\", Roma, Italy (2) Russian Academy of Science - Institute of Radioengineering and Electronics, Moscow, Russia (literal)

Titolo

• Gigahertz-range Electro-Acoustic Devices Based on Pseudo-Surface-Acoustic Waves in AlN/Diamond/Si Structures (literal)

Abstract

• Diamond and AlN are, respectively, the nonpiezoelectric and the piezoelectric materials showing the highest acoustic velocities. Consequently, pseudo-surface-acoustic waves ?PSAWs? in AlN/diamond structures exhibit the highest surface wave velocities among all known layered structures. Phase velocity dispersion curves and attenuation for PSAW propagating along this structure have been calculated for different electrical boundary conditions. An experimental delay line, designed to operate at low PSAW attenuation conditions, as predicted by theoretical results, has been implemented and tested. A good accordance between experimental results and theoretical predictions was found. It is expected that devices based on PSAW propagation in AlN/diamond structures are suitable to operate at frequencies several times higher than those of available devices, at a given linewidth resolution limit in the transducers technology (literal)

Prodotto di

• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)
• Sensori e Dispositivi nel Settore Acustico (MD.P09.001.001) (Modulo)

Autore CNR

• DOMENICO CANNATA' (Persona)
• FABIO DI PIETRANTONIO (Unità di personale interno)
• ENRICO VERONA (Unità di personale interno)
• MASSIMILIANO BENETTI (Persona)

Incoming links:

Autore CNR di

• ENRICO VERONA (Unità di personale interno)
• FABIO DI PIETRANTONIO (Unità di personale interno)
• MASSIMILIANO BENETTI (Persona)
• DOMENICO CANNATA' (Persona)

Prodotto

• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)
• Sensori e Dispositivi nel Settore Acustico (MD.P09.001.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)