http://www.cnr.it/ontology/cnr/individuo/prodotto/ID58434
Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors (Articolo in rivista)
- Type
- Label
- Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/jp108489k (literal)
- Alternative label
Sanz(1), M; Lopez-Arias(1,2,3), M; Marco, JF (1) ; de Nalda (1) , R; Amoruso, S (4,5) ; Ausanio, G (4,5) ; Lettieri, S (5) ; Bruzzese, R (4,5) ; Wang, X (5) ; Castillejo, M (1) (2011)
Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors
in Journal of physical chemistry. C
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Sanz(1), M; Lopez-Arias(1,2,3), M; Marco, JF (1) ; de Nalda (1) , R; Amoruso, S (4,5) ; Ausanio, G (4,5) ; Lettieri, S (5) ; Bruzzese, R (4,5) ; Wang, X (5) ; Castillejo, M (1) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CSIC, Inst Quim Fis Rocasolano, E-28006 Madrid, Spain
2. Univ Complutense Madrid, Fac Ciencias Quim, Unidad Asociada Dept Quim Fis 1, E-28040 Madrid, Spain
3. CSIC, Inst Estructura Mat, E-28006 Madrid, Spain
4. Univ Naples Federico 2, Dipartimento Sci Fisiche, I-80126 Naples, Italy
5. SPIN-CNR, I-80126 Naples, Italy (literal)
- Titolo
- Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors (literal)
- Abstract
- nanoparticles of the wide band gap II-VI
semiconductors CdS and ZnS were produced by ultrafast pulsed
laser deposition using pulses of ?300 fs at two wavelengths of
527 and 263 nm. Upon repetitive target irradiation, the isolated
nanoparticles assemble to form a nanostructured film whose
structural and chemical properties are compared to those of the
targets. UV ablation at 263 nm yields nanoparticles of 5 nm
average diameter in the case of CdS. At this wavelength the
crystalline phase and stoichiometry of the films markedly differ
from those of the target. At 527 nm the average size of the nanoparticles is larger, about 13 nm, but the deposits keep the structural
and chemical characteristics of the target. For ZnS the size of the nanoparticles is larger than for CdS although their properties also
resemble those of the target when they are produced upon irradiation in the visible. The results obtained allow discussion of the
interplay between the light absorption step, the plume dynamics, and the film growth and their impact on the structure and
nanometer morphology of the deposited material, while at the same time they exemplify the possibility of their control through the
choice of the wavelength of the femtosecond pulses. (literal)
- Prodotto di
- Autore CNR
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