http://www.cnr.it/ontology/cnr/individuo/prodotto/ID59123

InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes (Articolo in rivista)

Type

Label

InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes (Articolo in rivista) (literal)

Anno

Alternative label

Pitanti A., D. Ercolani, L. Sorba, S. Roddaro, F. Beltram, L. Nasi, G. SalviatI and A. Tredicucci (2011)
InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes
in Physical review. X; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Pitanti A., D. Ercolani, L. Sorba, S. Roddaro, F. Beltram, L. Nasi, G. SalviatI and A. Tredicucci (literal)

Pagina inizio

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

NEST, Scuola Normale Superiore and Istituto Nanoscienze - CNR, piazza San Silvestro 12, 56127 Pisa, Italy (A. Pitanti, D. Ercolani, L. Sorba, S. Roddaro, F. Beltram, and A. Tredicucci) IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma, Italy (L. Nasi, G. Salviati) (literal)

Titolo

Abstract

Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III) leads to a strong rectification effect when the current-voltage (I-V) characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range. (literal)

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