GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Musayeva N.; Abdullayeva S.; Pelosi C.; Attolini G.; Bosi M.; Clerjaud B.; Benalloul P.; Barthou C.; Jabbarov R.; Gambarov R. (2008)
  GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS
  in Fizika (Baku)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Musayeva N.; Abdullayeva S.; Pelosi C.; Attolini G.; Bosi M.; Clerjaud B.; Benalloul P.; Barthou C.; Jabbarov R.; Gambarov R. (literal)

Pagina inizio

• 130 (literal)

Pagina fine

• 133 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.science.gov.az/physics/indexF20083.html (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 14 (literal)

Rivista

• Fizika (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• academician G.M.Abdullyev Institute of Physics Azerbaijan National Academy of Sciences, H. Javid avenue,33, Baku, Azerbaijan, CNR-IMEM, Parma, Institut des NanoSciences de Paris, Université Pierre et Marie Curie, Paris, France (literal)

Titolo

• GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS (literal)

Abstract

• Raman scattering and photoluminescence properties of GaAs1-xNx epitaxial layers grown on GaAs and Ge substrates by means of metalorganic vapor phase epitaxy (MOVPE) have been investigated. Trimethylgallium (TMG), AsH3 and Dimethylhydrazine (DMHy) were used as precursors in the setup with horizontal reactor. The samples were grown at atmospheric pressure at temperature 5000C and varying the molar ratio between DMHy and the other precursors. Nitrogen in diluted GaAsN has been detected by Raman scattering through the observation of the nitrogen local vibrational mode at about 470 cm-1. Weak GaAs second order Raman features like TO and LO peaks are observed between 500 and 600 cm-1, evidencing alloy disorder. The photoluminescence (PL) properties have also been investigated on as grown samples. The PL peak energy of a GaAs1-xNx is 1.15 eV at 77 K, when the N content (x) is about 2.1 %. (literal)

Prodotto di

• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• CLAUDIO PELOSI (Persona)
• MATTEO BOSI (Persona)
• GIOVANNI ATTOLINI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR di

• GIOVANNI ATTOLINI (Unità di personale interno)
• CLAUDIO PELOSI (Persona)
• MATTEO BOSI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Fizika (Rivista)

Insieme di parole chiave di

• Parole chiave di "GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS" (Insieme di parole chiave)