SiC nano for picoGeo - SiC optical nano-strain-meters for pico-detection in Geosciences (DFM.AD001.283)

Area tematica

Scienze fisiche e tecnologie della materia

Area progettuale

Struttura responsabile del progetto di ricerca

Istituto per la microelettronica e microsistemi (IMM)

Responsabile di progetto

FRANCESCO LAVIA
Telefono: 0955968229
E-mail: francesco.lavia@imm.cnr.it

Abstract

The project addresses an innovative and radical vision, enabled by a new technology concept that challenges current
paradigms of high resolution strain detection for Geoscience and Geohazard monitoring. The goal is the development
of a radically new dynamic ground strain measurement technology with an ultra-high resolution of 10-12 that is about
two order of magnitude better than the presently available technology. The new technology is based on combining the
high performance 3C-SiC material with a high Young modulus (almost 3 times higher than silicon) that improves the
sensibility of the actual strain sensor, with fiber lasers for novel all-optical closed-loop operation of the resonator. This
design gives the opportunity to use an electronic readout far from the borehole and easily accessible out of the deep
drilling. In geophysical monitoring the proposed innovative instrument will allow to detect precisions not obtainable
with the current instruments. Ultra small and slow strain transients preceding earthquakes and eruptions could be
revealed and both new understanding of the volcano and of the seismology process can be obtained.

Data inizio attività

01/11/2019

Parole chiave

.silicon carbide, very high precision strain-meter, geophysics

Ultimo aggiornamento: 31/03/2025